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DTSTAMP:20260730T152640Z
LOCATION:Exhibit Hall
DTSTART;TZID=America/Los_Angeles:20260728T172800
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UID:dac_DAC 2026_sess306_WIP3265@linklings.com
SUMMARY:Late Breaking Results: FeMFET Multi-Level Cell Capacity Limits for
  SNN-Based Compute-in-Memory Inference
DESCRIPTION:Osama Abdelaal (Fraunhofer IPMS CNT), Alptekin Vardar (Fraunho
 fer IPMS), Nandakishor Yadav (Indian Institute of Technology Indore), and 
 Thomas Kämpfe (Fraunhofer IPMS)\n\nFeMFET multi-level cell (MLC) operation
  promises high-density weight storage for spiking neural network (SNN) inf
 erence in compute-in-memory (CIM) systems. We characterise 60 FeMFET devic
 es and show that 4-state operation produces an S2-S3 threshold-voltage sep
 aration of only 1.12 sigma (21.5% read error), rendering 4-state weights i
 nformation-theoretically insufficient for reliable classification regardle
 ss of training method. Using an information-theoretic bit-budget framework
 , we derive BB_min ≈ 6.64 bits as the minimum information capacity for 99%
 -accurate 4-class inference. We validate the framework on a synthetic 4-cl
 ass IR fall-detection task: weight precision of 4 bits or higher consisten
 tly exceeds the bound and achieves 96-99% accuracy under post-training qua
 ntization, while 1-bit precision collapses to chance (25%) regardless of t
 imesteps. 3-state FeMFET operation (separation ≥ 3.35 sigma, read error pr
 obability = 0.001) achieves 74.9% under post-training quantization, wherea
 s 4-state (read error probability = 0.215) degrades to 43.2% ± 10.6% under
  physical device noise. The framework translates directly into a hardware 
 specification, providing a principled pre-training viability criterion for
  any CIM system with characterised device distributions.\n\nTrack: Student
 \n\n
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