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BEGIN:VEVENT
DTSTAMP:20260730T152729Z
LOCATION:DAC Pavilion\, Exhibit Floor
DTSTART;TZID=America/Los_Angeles:20260729T150000
DTEND;TZID=America/Los_Angeles:20260729T160000
UID:dac_DAC 2026_sess296_ENGPOST267@linklings.com
SUMMARY:Isolated Lightning Rod Diode Structure for Process-Induced Dischar
 ge (PID) Dissipation to Reduce Leakage on Integrated Passive Device (IPD)
DESCRIPTION:Ramy Nashed Bassely Said, Jagat Shakya, James Waldemer, Jianyo
 ng Xie, Shamika Dolas, and Kaladhar Radhakrishnan (Intel)\n\nWe propose a 
 novel protection diode architecture (aka lightning rods) that enables proc
 ess-induced discharge while eliminating the leakage current induced due to
  protection diode placement. The lightning rods are placed on the peripher
 y of the die, outside of the Integrated Passive  Devices (IPD) circuitry, 
 hence eliminating the leakage path between the capacitor electrodes and th
 e protection diodes. Historically, protection diodes need to be placed in 
 the active region of the Integrated Passive Devices (IPD) such as capacito
 rs, inductors, heat elements, resistive temperature detectors (RTD), inter
 posers, IO connectors (e.g. EMIB) to allow for process-induced discharge. 
 Process-induced charging is proportional to the floating metal cumulative 
 area. When the charge accumulation reaches a certain level, discharge occu
 rs often leading to defects like burn mark/void /metal shorting etc. Prote
 ction diodes are typically connected to the metal plates to eliminate the 
 defects due to process-induced discharge (PID), and hence diode becomes pa
 rt of the active circuitry and increases current leakage. Therefore, placi
 ng the protection diodes in the vicinity of the active circuit but not dir
 ectly connected to it eliminates leakage. In this case, these protection d
 iodes act as lightning rods, similar to atmospheric discharge through ligh
 tning rods.\n\nTopics: AI, Chiplet, Design, EDA, Quantum, Security, System
 s\n\n
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