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Correct-by-Construction Framework for Robustness Against Divergent Voltage Drops and High Clock Divergence
DescriptionLimitations in Sign-off Methodology:
Traditional STA corner selection 10% lower STA corner from PMIC voltage is selected- design is constantly optimised for 10% lower voltage, thereby failing to build margin against differential drop.
IR aware STA does not account timing path's geometric imbalances (logic depths), net dominated interconnect skews (net delays & metal layer variation) - all dominant in advanced process nodes. Furthermore, this is workload dependent: fixing IR STA violations does not build margins on unseen vectors.
Frequent Silicon issues due to these gaps:
Low voltage mode scan shift Vmin jumps need to meet slack on paths which become exponentially sensitive to voltage gradients. Even small differential IR drops (capture & launch traversing through contrasting IR hotspot & cool regions) cause catastrophic slack loss
High divergence paths with structural imbalances-where clock paths are net-dominated & are operated at high speeds often fail to meet hold timing, despite good pre-silicon margins due to high interlayer metal-sheet & via resistances in lower process nodes.
Additionally, there is considerable PPA impact -higher dynamic & leakage power in clock & data paths respectively in divergent paths. Our proposed solution aims to address above gaps.